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Physikalische Gesellschaft Zürich
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- Gibert
Prof. Dr. Marta Gibert
Physik-Institut Uni Zürich

Interface Engineering in Oxide Heterostructures

Donnerstag 23. April 2020, um 19:30 Uhr (in 1.9 Monaten)
ETH Hauptgebäude Hörsaal HG G5, Rämistrasse 101

Sketch of the different stacking configuration of the bilayers and the corresponding total magnetization measured. (Bild psi.ch, "Reprinted with permission from Nano Lett., 15 (11), pp 7355–7361 (2015). Copyright 2015 American Chemical Society")

Complex transition metal oxides display a large variety of incredible physical properties, ranging from magnetism and ferroelectricity to more exotic behaviours such as colossal magnetoresistance and high temperature superconductivity.

Today, the advances in growth techniques allow us to generate oxide heterostructures (where layers of two or more oxide compounds are stacked one on top of the other) of quality comparable to that of conventional semiconductors. Such oxide heterostructures are highly interesting because they offer many new routes to further tune the functionalities of bulk oxides, and even allow the discovery of often unexpected phenomena (such as conductivity, and even superconductivity, at the interface between insulating compounds).

In this presentation, I will review the most exciting novel phenomena occurring at oxide interfaces.

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